Toshiba and Sandisk today announced an 8 Gbit NAND flash memory chip fabricated with 70 nm process technology. According to the two firms the technology will pave the way for a new wave of "GByte chips". The 8 Gbit prototype chip has an areal density of 20 billion transistors per square inch of silicon and is roughly five percent larger than the previous generation 4 Gbit chip that is manufactured in 90 nm.
Sandisk says the technology is good for a write speed of six MByte per second and a read speed of 60 MByte per second - about 40 percent faster than the current generation of chips.
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