Infineon samples dual-die, 4 GByte DDR2 memory

Munich - The integration of two core elements does not only benefit processors: Infineon claims it has developed the first dual-die DDR2 memory module to double overall capacity while increasing total height of the device by only 0.1 mm.

The new modules are based on eighteen 2 Gbit DDR2 components, which are created by stacking two 1 Gbit DDR2 SDRAMs. This dual-die approach allowed Infineon to double the current maximum DDR2 capacity from 2 GByte to 4 GByte.

The dual-die solution increases the height of the module only by the thickness of a sheet of letter paper or 0.1 mm for a total device height of 4.1 mm - which is about 40 percent less than the requirements set by the Joint Electronic Device Engineering Council (JEDEC).

According to Infineon spokeswoman Karin Braeckle, the 4 GByte modules are sampling now and are available in DDR2-400 and DDR2-533 speeds. Because of their compact size, the devices are targeting high-density servers in the low-end and midrange segment that now can pack four 4 GByte modules for a total of 16 GByte in one system. Down the road, Infineon sees the dual-die technology to move also into SO-DIMMs for Notebooks and increase DDR2 module capacity to 8 GByte by stacking 2 Gbit DDR2 SDRAMs.

The 4 GByte modules are currently available in sample quantities for $3900 per unit. Volume production will begin this summer, according to Braeckle.